Micron Technology, Inc. Memory IC and Storage Component MT29F512G08CMCEBJ4-37ITR:E

Description
IC FLASH 512GBIT PAR 132VBGA Product overview: MT29F512G08CMCEBJ4-3 7ITR:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F512G08CMCEB J4-37ITR:E can be used for catalog matching and distributor lookup.
  • Memory IC and Storage Component - 774-MT29F512G08CMCEBJ4-37ITR:E - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - Flash - MT29F512G08CMCEBJ4-37ITR:E - Win Source Electronics
    Win Source Electronics
  • Flash Memory, 512Gbit, -40 To 85Deg C; Flash Memory Type Micron - 80AH7807 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - MT29F512G08CMCEBJ4-37ITR:E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CMCEBJ4-37ITR:E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT29F512G08CMCEBJ4-37ITR:E - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
IC FLASH 512GBIT PAR 132VBGA Product overview: MT29F512G08CMCEBJ4-3 7ITR:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F512G08CMCEB J4-37ITR:E can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-MT29F512G08CMCEBJ4-37ITR:E - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F512G08CMCEBJ4-37ITR:E
Memory IC and Storage Component 774-MT29F512G08CMCEBJ4-37ITR:E
IC FLASH 512GBIT PAR 132VBGA Product overview: MT29F512G08CMCEBJ4-3 7ITR:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F512G08CMCEB J4-37ITR:E can be used for catalog matching and distributor lookup.

IC FLASH 512GBIT PAR 132VBGA Product overview: MT29F512G08CMCEBJ4-37ITR:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F512G08CMCEBJ4-37ITR:E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - MT29F512G08CMCEBJ4-37ITR:E - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F512G08CMCEBJ4-37ITR:E
Memory - Flash - MT29F512G08CMCEBJ4-37ITR:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: -40°C ~ 85°C (TA) Features: FLASH - NAND (MLC) Memory IC 512Gb (64G x 8) Parallel 267 MHz 132-VBGA (12x18) Package: 132-VBGA Package: Tray Mounting: Surface Mount Family Name: MT29F512G08 Categories: Integrated Circuits (ICs) Case / Package: 132-VBGA (12x18) Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1120 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0071

Manufacturer: Micron Technology Inc.
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: FLASH - NAND (MLC) Memory IC 512Gb (64G x 8) Parallel 267 MHz 132-VBGA (12x18)
Package: 132-VBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT29F512G08
Categories: Integrated Circuits (ICs)
Case / Package: 132-VBGA (12x18)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1120
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0071

Buy Now
Flash Memory, 512Gbit, -40 To 85Deg C; Flash Memory Type Micron - 80AH7807 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 512Gbit, -40 To 85Deg C; Flash Memory Type Micron
80AH7807
Flash Memory, 512Gbit, -40 To 85Deg C; Flash Memory Type Micron 80AH7807
FLASH MEMORY, 512GBIT, -40 TO 85DEG C; Flash Memory Type:MLC NAND; Memory Size:512Gbit; Flash Memory Configuration:64G x 8bit; IC Interface Type:Parallel; Memory Case Style:VBGA; No. of Pins:132Pins; Clock Frequency:266MHz RoHS Compliant: Yes

FLASH MEMORY, 512GBIT, -40 TO 85DEG C; Flash Memory Type:MLC NAND; Memory Size:512Gbit; Flash Memory Configuration:64G x 8bit; IC Interface Type:Parallel; Memory Case Style:VBGA; No. of Pins:132Pins; Clock Frequency:266MHz RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - MT29F512G08CMCEBJ4-37ITR:E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08CMCEBJ4-37ITR:E
Memory MT29F512G08CMCEBJ4-37ITR:E
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CMCEBJ4-37ITR:E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CMCEBJ4-37ITR:E
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CMCEBJ4-37ITR:E
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Memory - MT29F512G08CMCEBJ4-37ITR:E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08CMCEBJ4-37ITR:E
Memory MT29F512G08CMCEBJ4-37ITR:E
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F512G08CMCEBJ4-37ITR:E 80AH7807 MT29F512G08CMCEBJ4-37ITR:E MT29F512G08CMCEBJ4-37ITR:E MT29F512G08CMCEBJ4-37ITR:E
Product Name Memory IC and Storage Component Memory - Flash - MT29F512G08CMCEBJ4-37ITR:E Flash Memory, 512Gbit, -40 To 85Deg C; Flash Memory Type Micron Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type BGA; Tray BGA; 132-VBGA (12x18) VBGA BGA; 132-VBGA
Supply Voltage 3.6V; 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 132-VBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RC28F640P30B85A - Lingto Electronic Limited
Rochester Electronics
Memory
RC28F640P30B85A
Specs
Memory Category Flash; Flash
Access Time 85 ns
Density 64000 kbits
View Details
Memory - S25FL127SABBHVC00-ND - DigiKey
Infineon Technologies AG
Memory
S25FL127SABBHVC00
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 128000 kbits
View Details
3 suppliers
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD74HC40105MG4 - Texas Instruments
Texas Instruments
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register
CD74HC40105MG4
Specs
Memory Category FIFO
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD32M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details