Micron Technology, Inc. Memory MT29F512G08CEHBBJ4-3R:B TR

Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)
Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CEHBBJ4-3R:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CEHBBJ4-3R:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CEHBBJ4-3R:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CEHBBJ4-3R:B TR MT29F512G08CEHBBJ4-3R:B TR MT29F512G08CEHBBJ4-3R:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882551 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - IS29GL128S-10TFV01-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits
View Details
3 suppliers