Micron Technology, Inc. Memory MT29F512G08CECBBJ4-37ES:B TR

Description
IC FLASH 512GBIT PAR 132VBGA
Description
IC FLASH 512GBIT PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CECBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S25FL064LABNFN040-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 64000 kbits
View Details
4 suppliers
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 71016S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details