Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR

Description
IC FLASH 512GBIT PAR 132VBGA
  • Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT29F512G08CECBBJ4-37ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F512G08CECBBJ4-37ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 512GBIT PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CECBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Memory - MT29F512G08CECBBJ4-37ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08CECBBJ4-37ES:B TR
Memory MT29F512G08CECBBJ4-37ES:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Memory - MT29F512G08CECBBJ4-37ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08CECBBJ4-37ES:B TR
Memory MT29F512G08CECBBJ4-37ES:B TR
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
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