Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR

Description
IC FLASH 512GBIT PAR 132VBGA
Description
IC FLASH 512GBIT PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CECBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - QMP9GL512P11TFI010 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Density 512000 kbits
View Details
2 suppliers
Memory - S25FL128SAGMFV010 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details
Controllers - BQ2204ASN-N - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
SDRAM - 2420770 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details