Micron Technology, Inc. Memory MT29F512G08CECBBJ4-37ES:B TR

Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)
Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

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FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

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IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CECBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37ES:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR MT29F512G08CECBBJ4-37ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
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