Micron Technology, Inc. Memory MT29F512G08CECBBJ4-37:B TR

Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)
  • Memory - MT29F512G08CECBBJ4-37:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37:B TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT29F512G08CECBBJ4-37:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F512G08CECBBJ4-37:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08CECBBJ4-37:B TR
Memory MT29F512G08CECBBJ4-37:B TR
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08CECBBJ4-37:B TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08CECBBJ4-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08CECBBJ4-37:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site
Memory - MT29F512G08CECBBJ4-37:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08CECBBJ4-37:B TR
Memory MT29F512G08CECBBJ4-37:B TR
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CECBBJ4-37:B TR MT29F512G08CECBBJ4-37:B TR MT29F512G08CECBBJ4-37:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DW - Texas Instruments
Texas Instruments
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2226DW
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - 5962-8764814QYA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8764814QYA
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 512 kbits
View Details
Memory - MYXXXXX16MP16PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXXXXX16MP16PB-45/XX
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory, 1Mbit, 70Ns, 32-Plcc; Flash Memory Type Cypress Infineon Technologies - 69K8717 - Newark, An Avnet Company
Infineon Technologies AG
Flash Memory, 1Mbit, 70Ns, 32-Plcc; Flash Memory Type Cypress Infineon Technologies
AM29F010B-70JF
Specs
Memory Category Flash
Density 1000 kbits
Package Type LCC
View Details