Micron Technology, Inc. Memory MT29F512G08AUCBBK8-6:B TR

Description
IC FLASH 512GBIT PARALLEL 166MHZ
Description
IC FLASH 512GBIT PARALLEL 166MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512GBIT PARALLEL 166MHZ

IC FLASH 512GBIT PARALLEL 166MHZ

Supplier's Site
FLASH - NAND (SLC) Memory IC 512Gbit Parallel 166 MHz

FLASH - NAND (SLC) Memory IC 512Gbit Parallel 166 MHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08AUCBBK8-6:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08AUCBBK8-6:B TR
IC FLASH 512GBIT PARALLEL 166MHZ

IC FLASH 512GBIT PARALLEL 166MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08AUCBBK8-6:B TR MT29F512G08AUCBBK8-6:B TR MT29F512G08AUCBBK8-6:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 4721BDC - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1 kbits
View Details
Memory - 24C02/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details