Micron Technology, Inc. Memory MT29F4T08EYCBBG9-37ES:B TR

Description
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz
Description
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

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FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

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IC FLASH 4TB PARALLEL 267MHZ

IC FLASH 4TB PARALLEL 267MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4T08EYCBBG9-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F4T08EYCBBG9-37ES:B TR
IC FLASH 4TBIT PARALLEL 267MHZ

IC FLASH 4TBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
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