Micron Technology, Inc. Memory MT29F4T08EYCBBG9-37ES:B TR

Description
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz
Description
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

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Description
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FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4T08EYCBBG9-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F4T08EYCBBG9-37ES:B TR
IC FLASH 4TBIT PARALLEL 267MHZ

IC FLASH 4TBIT PARALLEL 267MHZ

Supplier's Site
IC FLASH 4TB PARALLEL 267MHZ

IC FLASH 4TB PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
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