Micron Technology, Inc. Memory MT29F4T08EYCBBG9-37ES:B TR

Description
IC FLASH 4TB PARALLEL 267MHZ
Description
IC FLASH 4TB PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 4TB PARALLEL 267MHZ

IC FLASH 4TB PARALLEL 267MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4T08EYCBBG9-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F4T08EYCBBG9-37ES:B TR
IC FLASH 4TBIT PARALLEL 267MHZ

IC FLASH 4TBIT PARALLEL 267MHZ

Supplier's Site
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR MT29F4T08EYCBBG9-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S33APC - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
2 suppliers
Memory - JM38510/23104BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - 448-S25FL064LABBHA020-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
3 suppliers
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details