Micron Technology, Inc. Memory MT29F4T08EYCBBG9-37:B TR

Description
IC FLASH 4TB PARALLEL 267MHZ
Description
IC FLASH 4TB PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 4TB PARALLEL 267MHZ

IC FLASH 4TB PARALLEL 267MHZ

Supplier's Site
FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

FLASH - NAND Memory IC 4Tbit Parallel 267 MHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4T08EYCBBG9-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F4T08EYCBBG9-37:B TR
IC FLASH 4TBIT PARALLEL 267MHZ

IC FLASH 4TBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4T08EYCBBG9-37:B TR MT29F4T08EYCBBG9-37:B TR MT29F4T08EYCBBG9-37:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882657P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 71256SA20PZG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 256 kbits
View Details
Quad Memory IC and Storage Component - 774-S25FL032P0XMFV010 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Cycle Time 5000 to 3.00E6 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
3 suppliers