Micron Technology, Inc. Memory MT29F4G16BABWP TR

Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G16BABWP TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F4G16BABWP TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G16BABWP TR
Integrated Circuits (ICs) - Memory - Memory MT29F4G16BABWP TR
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G16BABWP TR MT29F4G16BABWP TR MT29F4G16BABWP TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - BQ2205LYPWG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP; TSSOP; 16-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 3.6V; 3V ~ 3.6V
View Details
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS8S512K32PECB - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details