Micron Technology, Inc. IT infrastructure Memory MT29F4G16ABBEAM70M3WC1

Description
Category: IT infrastructure Memory Win Source Part Number: 1453221-MT29F4G16ABB EAM70M3WC1 Manufacturer: Micron Technology Inc.
  • IT infrastructure Memory - 1453221-MT29F4G16ABBEAM70M3WC1 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453221-MT29F4G16ABB EAM70M3WC1 Manufacturer: Micron Technology Inc.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453221-MT29F4G16ABBEAM70M3WC1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453221-MT29F4G16ABBEAM70M3WC1
IT infrastructure Memory 1453221-MT29F4G16ABBEAM70M3WC1
Category: IT infrastructure Memory Win Source Part Number: 1453221-MT29F4G16ABB EAM70M3WC1 Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Win Source Part Number: 1453221-MT29F4G16ABBEAM70M3WC1
Manufacturer: Micron Technology Inc.

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453221-MT29F4G16ABBEAM70M3WC1
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXX28HC256
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9089901M - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9089901M
View Details
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882632P
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - 27C512AE200/883C - Quarktwin Technology Ltd.
Texas Instruments
Memory
27C512AE200/883C
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
View Details
2 suppliers