Micron Technology, Inc. Memory MT29F4G08BBBWP TR

Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08BBBWP TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08BBBWP TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08BBBWP TR
Integrated Circuits (ICs) - Memory - Memory MT29F4G08BBBWP TR
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08BBBWP TR MT29F4G08BBBWP TR MT29F4G08BBBWP TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3417-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 16000 kbits
View Details
Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details