Micron Technology, Inc. Memory MT29F4G08BABWP-ET

Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08BABWP-ET - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

Buy Now
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08BABWP-ET - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08BABWP-ET
Integrated Circuits (ICs) - Memory - Memory MT29F4G08BABWP-ET
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08BABWP-ET MT29F4G08BABWP-ET MT29F4G08BABWP-ET
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - SMJ626162 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Access Time 12 ns
Operating Temperature -65 to 150 C (-85 to 302 F)
View Details
Memory - 71016S20PHG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Memory - NMC27C256BN150 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers