Micron Technology, Inc. Memory MT29F4G08BABWP-ET

Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08BABWP-ET - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08BABWP-ET - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08BABWP-ET
Integrated Circuits (ICs) - Memory - Memory MT29F4G08BABWP-ET
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08BABWP-ET MT29F4G08BABWP-ET MT29F4G08BABWP-ET
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 7164L20TPGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
Memory - 5962F1120202QXA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
View Details
2 suppliers
 - 93L422DM - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP22
View Details
3 suppliers