Micron Technology, Inc. Memory - Flash - MT29F4G08ABCHC:C TR MT29F4G08ABCHC:C TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote
Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F4G08ABCHC:C TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F4G08ABCHC:C TR
Memory - Flash - MT29F4G08ABCHC:C TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 63-VFBGA
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08ABCHC:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08ABCHC:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F4G08ABCHC:C TR
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F4G08ABCHC:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (10.5x13)

Buy Now

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABCHC:C TR MT29F4G08ABCHC:C TR MT29F4G08ABCHC:C TR
Product Name Memory - Flash - MT29F4G08ABCHC:C TR Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL116K0XMFV013-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 16000 kbits
View Details
3 suppliers
Memory - AS5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details