Micron Technology, Inc. IT infrastructure Memory MT29F4G08ABBFAH4-AIT:F

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
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Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
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Datasheet
Datasheet Summary
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The Micron 4Gbit NAND Flash Memory (part number MT29F4G08ABBFAH4) features single-level cell (SLC) technology and operates within an industrial temperature range of -40¬8C to +85¬8C. It has a device size of 4Gb, organized as 512M x 8 bits, with a page size of 4352 bytes and a block size of 64 pages. The memory supports asynchronous I/O performance with a typical read page time of 25¬µs (with ECC disabled) and a program page time of 200¬µs (with ECC disabled). The device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and includes advanced command sets such as program page cache mode and one-time programmable (OTP) mode. Endurance is rated at 100,000 program/erase cycles, with a data retention period of 10 years at 85¬8C. The operating voltage range is between 1.7V and 1.95V. The package is a 63-ball VFBGA, measuring 9mm x 11mm x 1.0mm. This product is suitable for applications requiring reliable flash memory in harsh environments.

Datasheet Summary
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The Micron 4Gbit NAND Flash Memory (part number MT29F4G08ABBFAH4) features single-level cell (SLC) technology and operates within an industrial temperature range of -40¬8C to +85¬8C. It has a device size of 4Gb, organized as 512M x 8 bits, with a page size of 4352 bytes and a block size of 64 pages. The memory supports asynchronous I/O performance with a typical read page time of 25¬µs (with ECC disabled) and a program page time of 200¬µs (with ECC disabled). The device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and includes advanced command sets such as program page cache mode and one-time programmable (OTP) mode. Endurance is rated at 100,000 program/erase cycles, with a data retention period of 10 years at 85¬8C. The operating voltage range is between 1.7V and 1.95V. The package is a 63-ball VFBGA, measuring 9mm x 11mm x 1.0mm. This product is suitable for applications requiring reliable flash memory in harsh environments.

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

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Memory - 557-MT29F4G08ABBFAH4-AIT:F-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)

Buy Now Datasheet
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
FLASH - NAND (SLC) Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 4Gbit Parallel 63-VFBGA (9x11)

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Integrated Circuits (ICs) - Memory - Memory - MT29F4G08ABBFAH4-AIT:F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08ABBFAH4-AIT:F
Integrated Circuits (ICs) - Memory - Memory MT29F4G08ABBFAH4-AIT:F
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type Micron - 80AH7794 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type Micron
80AH7794
Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type Micron 80AH7794
FLASH MEMORY, 4GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:4Gbit; Flash Memory Configuration:512M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:-RoHS Compliant: Yes

FLASH MEMORY, 4GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:4Gbit; Flash Memory Configuration:512M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-MT29F4G08ABBFAH4-AIT:F-ND MT29F4G08ABBFAH4-AIT:F MT29F4G08ABBFAH4-AIT:F MT29F4G08ABBFAH4-AIT:F 80AH7794
Product Name IT infrastructure Memory Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory Flash Memory, 4Gbit, -40 To 85Deg C; Flash Memory Type Micron
Memory Category Flash Flash Flash; Flash Flash; FLASH Flash; Non-Volatile Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 63-VFBGA BGA; 63-VFBGA BGA VFBGA
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V -40degC ~ 85degC (TA)
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