Micron Technology, Inc. Memory MT29F4G08ABBDAM60A3WC1

Description
SLC 4G DIE 512MX8
  • Memory - MT29F4G08ABBDAM60A3WC1 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F4G08ABBDAM60A3WC1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
SLC 4G DIE 512MX8
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08ABBDAM60A3WC1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F4G08ABBDAM60A3WC1
Memory MT29F4G08ABBDAM60A3WC1
SLC 4G DIE 512MX8

SLC 4G DIE 512MX8

Supplier's Site Datasheet
Memory - MT29F4G08ABBDAM60A3WC1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F4G08ABBDAM60A3WC1
Memory MT29F4G08ABBDAM60A3WC1
FLASH - NAND Memory IC 4Gbit Parallel Die

FLASH - NAND Memory IC 4Gbit Parallel Die

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F4G08ABBDAM60A3WC1 MT29F4G08ABBDAM60A3WC1
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG - Texas Instruments
Texas Instruments
SMV512K32-SP 16MB Radiation-Hardened SRAM
SMV512K32HFG
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
6 suppliers
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882568
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8FLC2M32
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9459903MXC - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9459903MXC
View Details