Micron Technology, Inc. Memory MT29F4G08ABAEAH4-S:E

Description
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08ABAEAH4-S:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

Buy Now
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E
Product Name Memory Memory Memory
Memory Category Flash; FLASH Flash; Flash Flash; FLASH - NAND
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details