Micron Technology, Inc. Memory MT29F4G08ABAEAH4-S:E

Description
IC FLASH 4GBIT PARALLEL 63VFBGA
Request a Quote Datasheet
Description
IC FLASH 4GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F4G08ABAEAH4-S:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

Buy Now

Technical Specifications

  ODG (Origin Data Global) Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E
Product Name Memory Memory Memory
Memory Category Flash; FLASH - NAND Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K128M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
Memory - 27C256-17/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 170 ns
Density 256 kbits
View Details
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - S25FL064P0XMFV001M - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
2 suppliers