Micron Technology, Inc. Memory MT29F4G08ABAEAH4-S:E

Description
IC FLASH 4GBIT PARALLEL 63VFBGA
  • Memory - MT29F4G08ABAEAH4-S:E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory - MT29F4G08ABAEAH4-S:E - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F4G08ABAEAH4-S:E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
IC FLASH 4GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F4G08ABAEAH4-S:E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT29F4G08ABAEAH4-S:E
Memory MT29F4G08ABAEAH4-S:E
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F4G08ABAEAH4-S:E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F4G08ABAEAH4-S:E
Memory MT29F4G08ABAEAH4-S:E
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F4G08ABAEAH4-S:E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F4G08ABAEAH4-S:E
Memory MT29F4G08ABAEAH4-S:E
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

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Technical Specifications

  ODG (Origin Data Global) Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E MT29F4G08ABAEAH4-S:E
Product Name Memory Memory Memory
Memory Category Flash; FLASH - NAND Flash; Flash Flash; FLASH
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