Micron Technology, Inc. Memory MT29F4G08ABAEAH4-S:E TR

Description
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
Description
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08ABAEAH4-S:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08ABAEAH4-S:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F4G08ABAEAH4-S:E TR
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABAEAH4-S:E TR MT29F4G08ABAEAH4-S:E TR MT29F4G08ABAEAH4-S:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712194 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Package Type SOIC
View Details
Controllers - BQ2204ASN-NTRG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - MYX4DD3K256M16BG1 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - S25FL127SABBHIC00 - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Memory Category Flash; FLASH - NOR
Data Rate 108 MHz
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
5 suppliers