Manufacturer: Micron Technology Inc.
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
IC FLASH 4GBIT PARALLEL 63VFBGA Product overview: MT29F4G08ABADAH4-E:D
IC FLASH 4GBIT PARALLEL 63VFBGA
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
IC FLASH 4GBIT PARALLEL 63VFBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT29F4G08ABADAH4-E:D | MT29F4G08ABADAH4-E:D | MT29F4G08ABADAH4-E:D | MT29F4G08ABADAH4-E:D | |
| Product Name | Memory - Flash - MT29F4G08ABADAH4-E:D | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Flash; FLASH | Flash; Non-Volatile | Flash; Flash | Flash; FLASH | Flash; Non-Volatile |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Supply Voltage | 2.7 V ~ 3.6 V | -3.3V; 3.6V; 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V | 63-VFBGA | |
| Endurance | 100000 Write/Erase Cycles | ||||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits |