Micron Technology, Inc. Memory MT29F3T08EUCBBM4-37ES:B TR

Description
IC FLASH 3TB PARALLEL 267MHZ
  • Memory - MT29F3T08EUCBBM4-37ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F3T08EUCBBM4-37ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 3TB PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F3T08EUCBBM4-37ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F3T08EUCBBM4-37ES:B TR
Memory MT29F3T08EUCBBM4-37ES:B TR
IC FLASH 3TB PARALLEL 267MHZ

IC FLASH 3TB PARALLEL 267MHZ

Supplier's Site
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EUCBBM4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUCBBM4-37ES:B TR
IC FLASH 3TBIT PARALLEL 267MHZ

IC FLASH 3TBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F3T08EUCBBM4-37ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F3T08EUCBBM4-37ES:B TR
Memory MT29F3T08EUCBBM4-37ES:B TR
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
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