Micron Technology, Inc. Memory MT29F3T08EUCBBM4-37ES:B TR

Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz
  • Memory - MT29F3T08EUCBBM4-37ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F3T08EUCBBM4-37ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F3T08EUCBBM4-37ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F3T08EUCBBM4-37ES:B TR
Memory MT29F3T08EUCBBM4-37ES:B TR
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

Buy Now
Memory - MT29F3T08EUCBBM4-37ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F3T08EUCBBM4-37ES:B TR
Memory MT29F3T08EUCBBM4-37ES:B TR
IC FLASH 3TB PARALLEL 267MHZ

IC FLASH 3TB PARALLEL 267MHZ

Supplier's Site
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EUCBBM4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUCBBM4-37ES:B TR
IC FLASH 3TBIT PARALLEL 267MHZ

IC FLASH 3TBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
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