Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUCBBM4-37ES:B TR

Description
IC FLASH 3TBIT PARALLEL 267MHZ
Description
IC FLASH 3TBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EUCBBM4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUCBBM4-37ES:B TR
IC FLASH 3TBIT PARALLEL 267MHZ

IC FLASH 3TBIT PARALLEL 267MHZ

Supplier's Site
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

Buy Now
IC FLASH 3TB PARALLEL 267MHZ

IC FLASH 3TB PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR MT29F3T08EUCBBM4-37ES:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 27C512AE200/883C - Acme Chip Technology Co., Limited
Specs
Memory Category EPROM; Non-Volatile
Density 512 kbits
Package Type 200 ns
View Details
2 suppliers
Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS5SP512K18 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Memory - 589286-002-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers