Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F32G08FAAWP-ET:A TR

Description
IC FLASH 32GBIT PAR 48TSOP I
Description
IC FLASH 32GBIT PAR 48TSOP I

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F32G08FAAWP-ET:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F32G08FAAWP-ET:A TR
Integrated Circuits (ICs) - Memory - Memory MT29F32G08FAAWP-ET:A TR
IC FLASH 32GBIT PAR 48TSOP I

IC FLASH 32GBIT PAR 48TSOP I

Supplier's Site
IC FLSH 32GBIT PARALLEL 48TSOP I

IC FLSH 32GBIT PARALLEL 48TSOP I

Supplier's Site
FLASH - NAND Memory IC 32Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 32Gbit Parallel 48-TSOP I

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F32G08FAAWP-ET:A TR MT29F32G08FAAWP-ET:A TR MT29F32G08FAAWP-ET:A TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821502VXF - 5962R1821502VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 4 k
View Details