Micron Technology, Inc. Memory MT29F32G08CBECBL73A3WC1

Description
IC FLASH 32GBIT PARALLEL DIE
  • Memory - MT29F32G08CBECBL73A3WC1 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F32G08CBECBL73A3WC1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 32GBIT PARALLEL DIE
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F32G08CBECBL73A3WC1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F32G08CBECBL73A3WC1
Memory MT29F32G08CBECBL73A3WC1
IC FLASH 32GBIT PARALLEL DIE

IC FLASH 32GBIT PARALLEL DIE

Supplier's Site Datasheet
Memory - MT29F32G08CBECBL73A3WC1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F32G08CBECBL73A3WC1
Memory MT29F32G08CBECBL73A3WC1
FLASH - NAND Memory IC 32Gbit Parallel Die

FLASH - NAND Memory IC 32Gbit Parallel Die

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F32G08CBECBL73A3WC1 MT29F32G08CBECBL73A3WC1
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C512AE200/883C - Quarktwin Technology Ltd.
Texas Instruments
Memory
27C512AE200/883C
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
View Details
2 suppliers
Memory - S25FL116K0XBHV030 - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL116K0XBHV030
Specs
Memory Category Flash; Flash
Density 16000 kbits
View Details
Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882785P
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD4M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details