Micron Technology, Inc. Memory MT29F32G08CBCDBJ4-10:D

Description
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)
  • Memory - MT29F32G08CBCDBJ4-10:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F32G08CBCDBJ4-10:D - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F32G08CBCDBJ4-10:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F32G08CBCDBJ4-10:D
Memory MT29F32G08CBCDBJ4-10:D
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)

Buy Now
Memory - MT29F32G08CBCDBJ4-10:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F32G08CBCDBJ4-10:D
Memory MT29F32G08CBCDBJ4-10:D
IC FLASH 32GBIT PARALLEL 132VBGA

IC FLASH 32GBIT PARALLEL 132VBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F32G08CBCDBJ4-10:D MT29F32G08CBCDBJ4-10:D
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

- 27S181PC - Rochester Electronics
Rochester Electronics
Memory
27S181PC
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
4 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 0791076249RQA00 - Lingto Electronic Limited
Infineon Technologies AG
Memory
0791076249RQA00
View Details
2 suppliers
- LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
LP3913SQ-AU/NOPB
Specs
Memory Category Flash
Package Type HVQFN48
View Details