Micron Technology, Inc. Memory MT29F32G08CBCDBJ4-10:D

Description
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)
  • Memory - MT29F32G08CBCDBJ4-10:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F32G08CBCDBJ4-10:D - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F32G08CBCDBJ4-10:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F32G08CBCDBJ4-10:D
Memory MT29F32G08CBCDBJ4-10:D
FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 32Gbit Parallel 100 MHz 132-VBGA (12x18)

Buy Now
Memory - MT29F32G08CBCDBJ4-10:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F32G08CBCDBJ4-10:D
Memory MT29F32G08CBCDBJ4-10:D
IC FLASH 32GBIT PARALLEL 132VBGA

IC FLASH 32GBIT PARALLEL 132VBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F32G08CBCDBJ4-10:D MT29F32G08CBCDBJ4-10:D
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44400
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - PAL16R8AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
Memory
PAL16R8AJ/883
View Details
Memory - 28C64A-25B/YA - Lingto Electronic Limited
Rochester Electronics
Memory
28C64A-25B/YA
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 64 kbits
View Details
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1712234P
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details