Micron Technology, Inc. Memory MT29F2T08EMHAFJ4-3ITF:A TR

Description
FLASH - NAND (TLC) Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)
Description
FLASH - NAND (TLC) Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (TLC) Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
IC FLASH 2TB PARALLEL 333MHZ

IC FLASH 2TB PARALLEL 333MHZ

Supplier's Site
Integrated Circuits (ICs) - Memory MT29F2T08EMHAFJ4-3ITF:A TR
IC FLASH 2TB PARALLEL 333MHZ

IC FLASH 2TB PARALLEL 333MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F2T08EMHAFJ4-3ITF:A TR MT29F2T08EMHAFJ4-3ITF:A TR MT29F2T08EMHAFJ4-3ITF:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000000000 kbits 2000000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882679 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 6116LA25TBD - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Memory - AS5SP512K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details