Micron Technology, Inc. Memory MT29F2T08CUHBBM4-3R:B TR

Description
IC FLASH 2TB PARALLEL 333MHZ
Description
IC FLASH 2TB PARALLEL 333MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 2TB PARALLEL 333MHZ

IC FLASH 2TB PARALLEL 333MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2T08CUHBBM4-3R:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F2T08CUHBBM4-3R:B TR
IC FLASH 2TBIT PARALLEL 333MHZ

IC FLASH 2TBIT PARALLEL 333MHZ

Supplier's Site
FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F2T08CUHBBM4-3R:B TR MT29F2T08CUHBBM4-3R:B TR MT29F2T08CUHBBM4-3R:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - BQ2205LYPWG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP; TSSOP; 16-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 3.6V; 3V ~ 3.6V
View Details
Memory - 5962-8961415QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 1000 kbits
View Details
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 9242500072000 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers