Micron Technology, Inc. Memory MT29F2G16ABBFAH4:F

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)
  • Memory - MT29F2G16ABBFAH4:F - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F2G16ABBFAH4:F - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F2G16ABBFAH4:F - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F2G16ABBFAH4:F
Memory MT29F2G16ABBFAH4:F
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

Buy Now
Memory - MT29F2G16ABBFAH4:F - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F2G16ABBFAH4:F
Memory MT29F2G16ABBFAH4:F
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F2G16ABBFAH4:F MT29F2G16ABBFAH4:F
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882878P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882878P
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Integrated Circuits (ICs) - Memory - Memory - 4720BDC - Acme Chip Technology Co., Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
4720BDC
Specs
Memory Category Volatile
Density 0 kbits
Supply Voltage Surface Mount
View Details
2 suppliers
Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR3L128M16JTBG
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details
Memory - 122005 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
122005
View Details
2 suppliers