Micron Technology, Inc. Memory MT29F2G16ABBEAH4-AAT:E TR

Description
IC FLASH 2GBIT PARALLEL 63VFBGA
  • Memory - MT29F2G16ABBEAH4-AAT:E TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory IC and Storage Component - 774-MT29F2G16ABBEAH4-AAT:E TR - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - 557-MT29F2G16ABBEAH4-AAT:ETRCT-ND - DigiKey
    DigiKey
  • Memory - 557-MT29F2G16ABBEAH4-AAT:ETRDKR-ND - DigiKey
    DigiKey
  • Memory - 557-MT29F2G16ABBEAH4-AAT:ETR-ND - DigiKey
    DigiKey
  • Memory - MT29F2G16ABBEAH4-AAT:E TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - Memory - MT29F2G16ABBEAH4-AAT:E TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT29F2G16ABBEAH4-AAT:E TR - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
IC FLASH 2GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F2G16ABBEAH4-AAT:E TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT29F2G16ABBEAH4-AAT:E TR
Memory MT29F2G16ABBEAH4-AAT:E TR
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site
Memory IC and Storage Component - 774-MT29F2G16ABBEAH4-AAT:E TR - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F2G16ABBEAH4-AAT:E TR
Memory IC and Storage Component 774-MT29F2G16ABBEAH4-AAT:E TR
IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G16ABBEAH4-AAT :E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G16ABBEAH4 -AAT:E TR can be used for catalog matching and distributor lookup.

IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G16ABBEAH4-AAT:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G16ABBEAH4-AAT:E TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 557-MT29F2G16ABBEAH4-AAT:ETRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
557-MT29F2G16ABBEAH4-AAT:ETRCT-ND
Memory 557-MT29F2G16ABBEAH4-AAT:ETRCT-ND
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Buy Now Datasheet
Memory - 557-MT29F2G16ABBEAH4-AAT:ETRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
557-MT29F2G16ABBEAH4-AAT:ETRDKR-ND
Memory 557-MT29F2G16ABBEAH4-AAT:ETRDKR-ND
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Buy Now Datasheet
Memory - 557-MT29F2G16ABBEAH4-AAT:ETR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
557-MT29F2G16ABBEAH4-AAT:ETR-ND
Memory 557-MT29F2G16ABBEAH4-AAT:ETR-ND
FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 63-VFBGA (9x11)

Buy Now Datasheet
Memory - MT29F2G16ABBEAH4-AAT:E TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F2G16ABBEAH4-AAT:E TR
Memory MT29F2G16ABBEAH4-AAT:E TR
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F2G16ABBEAH4-AAT:E TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G16ABBEAH4-AAT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F2G16ABBEAH4-AAT:E TR
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F2G16ABBEAH4-AAT:E TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F2G16ABBEAH4-AAT:E TR
Memory MT29F2G16ABBEAH4-AAT:E TR
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F2G16ABBEAH4-AAT:E TR 774-MT29F2G16ABBEAH4-AAT:E TR 557-MT29F2G16ABBEAH4-AAT:ETRCT-ND MT29F2G16ABBEAH4-AAT:E TR MT29F2G16ABBEAH4-AAT:E TR MT29F2G16ABBEAH4-AAT:E TR
Product Name Memory Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH - NAND Flash; Non-Volatile Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits
Package Type 63-VFBGA BGA; Tape & Reel (TR) 63-VFBGA BGA; 63-VFBGA BGA
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