Micron Technology, Inc. Memory MT29F2G16ABAEAWP-IT:E

Description
FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 48-TSOP I
Request a Quote Datasheet
Description
FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 48-TSOP I
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-1613-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 48-TSOP I

Buy Now Datasheet
Memory IC and Storage Component - 774-MT29F2G16ABAEAWP-IT:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F2G16ABAEAWP-IT:E
Memory IC and Storage Component 774-MT29F2G16ABAEAWP-IT:E
IC FLASH 2GBIT PARALLEL 48TSOP I Product overview: MT29F2G16ABAEAWP-IT: E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G16ABAEAWP -IT:E can be used for catalog matching and distributor lookup.

IC FLASH 2GBIT PARALLEL 48TSOP I Product overview: MT29F2G16ABAEAWP-IT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G16ABAEAWP-IT:E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - MT29F2G16ABAEAWP-IT:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G16ABAEAWP-IT:E
Memory - Flash - MT29F2G16ABAEAWP-IT:E
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Family Name: MT29F2G16ABAEAWP Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): S34ML02G104TFI000; S34ML02G104TFI003; S34ML02G104TFI010; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Family Name: MT29F2G16ABAEAWP
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): S34ML02G104TFI000; S34ML02G104TFI003; S34ML02G104TFI010;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F2G16ABAEAWP-IT:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G16ABAEAWP-IT:E
Integrated Circuits (ICs) - Memory - Memory MT29F2G16ABAEAWP-IT:E
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-1613-ND 774-MT29F2G16ABAEAWP-IT:E MT29F2G16ABAEAWP-IT:E MT29F2G16ABAEAWP-IT:E MT29F2G16ABAEAWP-IT:E MT29F2G16ABAEAWP-IT:E
Product Name Memory Memory IC and Storage Component Memory - Flash - MT29F2G16ABAEAWP-IT:E Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; FLASH - NAND Flash; Non-Volatile Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Specs
Memory Category Volatile
Density 0 kbits
Package Type 4.5 ns
View Details
 - 4164-15FGS/BZA - Rochester Electronics
Rochester Electronics
Specs
Memory Category DRAM Chip
Package Type CLCC18
View Details
4 suppliers
SDRAM - 2420768P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details