Micron Technology, Inc. Memory MT29F2G08ABDWP:D TR

Description
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I
Description
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F2G08ABDWP:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABDWP:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABDWP:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABDWP:D TR
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F2G08ABDWP:D TR MT29F2G08ABDWP:D TR MT29F2G08ABDWP:D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details