Micron Technology, Inc. Memory MT29F2G08ABCWP:C TR

Description
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I
Description
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F2G08ABCWP:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABCWP:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABCWP:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABCWP:C TR
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F2G08ABCWP:C TR MT29F2G08ABCWP:C TR MT29F2G08ABCWP:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL128SDPNFI000 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details
Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 8 611 200 742 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers