IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABBEAH4-IT:
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Family Name: MT29F2G08ABBEAH4
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): K9F2G08R0A-JIB00; K9F2G08R0A-JIB0T; K9F2G08R0A-JCB0; K9F2G08R0A-JIB0;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
IC FLASH 2GBIT PARALLEL 63VFBGA
FLASH MEMORY, 2GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:2Gbit; Flash Memory Configuration:256M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz RoHS Compliant: Yes
FLASH MEMORY, 2GBIT, -40 TO 85DEG C ROHS COMPLIANT: YES
IC FLASH 2GBIT PARALLEL 63VFBGA
IC FLASH 2GBIT PARALLEL 63VFBGA
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT29F2G08ABBEAH4-IT:E | MT29F2G08ABBEAH4-IT:E | 80AH7728 | 51AK1328 | MT29F2G08ABBEAH4-IT:E | MT29F2G08ABBEAH4-IT:E | MT29F2G08ABBEAH4-IT:E | |
| Product Name | Memory IC and Storage Component | Memory - Flash - MT29F2G08ABBEAH4-IT:E | Memory | Flash Memory, 2Gbit, -40 To 85Deg C; Flash Memory Type Micron | Flash Memory, 2Gbit, -40 To 85Deg C Rohs Compliant Micron | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash; FLASH | Flash; FLASH - NAND | Flash | Flash | Flash; Non-Volatile | Flash; Flash | Flash; FLASH |
| Endurance | 100000 Write/Erase Cycles | |||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | ||
| Number of Words | 256000 k |