Micron Technology, Inc. Memory - Flash - MT29F2G08ABAEAWP:E TR MT29F2G08ABAEAWP:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote
Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F2G08ABAEAWP:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G08ABAEAWP:E TR
Memory - Flash - MT29F2G08ABAEAWP:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABAEAWP:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABAEAWP:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABAEAWP:E TR
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F2G08ABAEAWP:E TR MT29F2G08ABAEAWP:E TR MT29F2G08ABAEAWP:E TR
Product Name Memory - Flash - MT29F2G08ABAEAWP:E TR Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8858702XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 4 kbits
View Details