Micron Technology, Inc. Memory - Flash - MT29F2G08ABAEAH4-E:E MT29F2G08ABAEAH4-E:E

Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Technology: FLASH - NAND Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08 Categories: Integrated Circuits (ICs) Memory Format: FLASH Memory Interface: Parallel Introduction Date: January 01, 2000 Country of Origin: Singapore Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Technology: FLASH - NAND Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08 Categories: Integrated Circuits (ICs) Memory Format: FLASH Memory Interface: Parallel Introduction Date: January 01, 2000 Country of Origin: Singapore Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F2G08ABAEAH4-E:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G08ABAEAH4-E:E
Memory - Flash - MT29F2G08ABAEAH4-E:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Technology: FLASH - NAND Operating Supply Voltage: 2.7 V ~ 3.6 V Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08 Categories: Integrated Circuits (ICs) Memory Format: FLASH Memory Interface: Parallel Introduction Date: January 01, 2000 Country of Origin: Singapore Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Technology: FLASH - NAND
Operating Supply Voltage: 2.7 V ~ 3.6 V
Memory Type: Non-Volatile
Memory Size: 2Gb (256M x 8)
Family Name: MT29F2G08
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Memory Interface: Parallel
Introduction Date: January 01, 2000
Country of Origin: Singapore
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Memory IC and Storage Component - 774-MT29F2G08ABAEAH4-E:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F2G08ABAEAH4-E:E
Memory IC and Storage Component 774-MT29F2G08ABAEAH4-E:E
IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABAEAH4-E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08ABAEAH4 -E:E can be used for catalog matching and distributor lookup.

IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABAEAH4-E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08ABAEAH4-E:E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABAEAH4-E:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABAEAH4-E:E
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABAEAH4-E:E
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F2G08ABAEAH4-E:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F2G08ABAEAH4-E:E MT29F2G08ABAEAH4-E:E MT29F2G08ABAEAH4-E:E MT29F2G08ABAEAH4-E:E
Product Name Memory - Flash - MT29F2G08ABAEAH4-E:E Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Supply Voltage 2.7 V ~ 3.6 V -3.3V; 3.6V; 2.7V ~ 3.6V Surface Mount 3.6V; 2.7V ~ 3.6V
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