Micron Technology, Inc. Memory - Flash - MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Datasheet
Datasheet Summary
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The MT29F2G08AADWP:D TR is a 2Gb NAND Flash memory device from Quarktwin Technology Ltd., available in both x8 and x16 configurations. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP type I format. The device supports single-level cell (SLC) technology and is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard. Performance specifications include a random read time of 25µs and sequential read times of 25ns at 3.3V and 35ns at 1.8V. Write performance is characterized by a typical program page time of 220µs at 3.3V and 300µs at 1.8V, with a block erase time of 500µs. The memory offers a data retention period of 10 years and an endurance of 100,000 program/erase cycles. The device features an industry-standard command set, including advanced commands such as program page cache mode and page read cache mode. It also includes operational status bytes for monitoring completion and conditions, as well as a write-protect signal. The operating temperature range is from 0°C to +70°C for commercial applications and from -40°C to +85°C for extended applications.

Datasheet Summary
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The MT29F2G08AADWP:D TR is a 2Gb NAND Flash memory device from Quarktwin Technology Ltd., available in both x8 and x16 configurations. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP type I format. The device supports single-level cell (SLC) technology and is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard. Performance specifications include a random read time of 25µs and sequential read times of 25ns at 3.3V and 35ns at 1.8V. Write performance is characterized by a typical program page time of 220µs at 3.3V and 300µs at 1.8V, with a block erase time of 500µs. The memory offers a data retention period of 10 years and an endurance of 100,000 program/erase cycles. The device features an industry-standard command set, including advanced commands such as program page cache mode and page read cache mode. It also includes operational status bytes for monitoring completion and conditions, as well as a write-protect signal. The operating temperature range is from 0°C to +70°C for commercial applications and from -40°C to +85°C for extended applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F2G08AADWP:D TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G08AADWP:D TR
Memory - Flash - MT29F2G08AADWP:D TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT29F2G08AADWP:D TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT29F2G08AADWP:D TR
Memory IC and Storage Component 774-MT29F2G08AADWP:D TR
IC FLASH 2GBIT PARALLEL 48TSOP I Product overview: MT29F2G08AADWP:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08AADWP:D TR can be used for catalog matching and distributor lookup.

IC FLASH 2GBIT PARALLEL 48TSOP I Product overview: MT29F2G08AADWP:D TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08AADWP:D TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet
Memory - MT29F2G08AADWP:D TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08AADWP:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08AADWP:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F2G08AADWP:D TR
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR
Product Name Memory - Flash - MT29F2G08AADWP:D TR Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash Flash; FLASH Flash; Non-Volatile
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