Micron Technology, Inc. Memory - Flash - MT29F2G08AADWP:D TR MT29F2G08AADWP:D TR

The MT29F2G08AADWP:D TR is a 2Gb NAND Flash memory device from Quarktwin Technology Ltd., available in both x8 and x16 configurations. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP type I format. The device supports single-level cell (SLC) technology and is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard. Performance specifications include a random read time of 25¬µs and sequential read times of 25ns at 3.3V and 35ns at 1.8V. Write performance is characterized by a typical program page time of 220¬µs at 3.3V and 300¬µs at 1.8V, with a block erase time of 500¬µs. The memory offers a data retention period of 10 years and an endurance of 100,000 program/erase cycles. The device features an industry-standard command set, including advanced commands such as program page cache mode and page read cache mode. It also includes operational status bytes for monitoring completion and conditions, as well as a write-protect signal. The operating temperature range is from 0¬8C to +70¬8C for commercial applications and from -40¬8C to +85¬8C for extended applications.