Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F256G08EFEBBWP-M:B TR

Description
IC FLASH 256GBIT PAR 48TSOP I
Description
IC FLASH 256GBIT PAR 48TSOP I

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08EFEBBWP-M:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08EFEBBWP-M:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08EFEBBWP-M:B TR
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08EFEBBWP-M:B TR MT29F256G08EFEBBWP-M:B TR MT29F256G08EFEBBWP-M:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL128SAGMFB010 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details
 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - IS29GL01GS-11DHV023 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 1000000 kbits
View Details
2 suppliers