Micron Technology, Inc. IT infrastructure Memory MT29F256G08EECBBJ4-6:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
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Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

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FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 167 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F256G08EECBBJ4-6:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08EECBBJ4-6:B
Integrated Circuits (ICs) - Memory - Memory MT29F256G08EECBBJ4-6:B
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08EECBBJ4-6:B MT29F256G08EECBBJ4-6:B MT29F256G08EECBBJ4-6:B
Product Name IT infrastructure Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256000000 kbits 256000000 kbits 256000000 kbits
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