Micron Technology, Inc. Memory MT29F256G08EBHAFB16A3WSA

Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die
Datasheet
Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die
Datasheet

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die

Buy Now
Integrated Circuits (ICs) - Memory MT29F256G08EBHAFB16A3WSA
TLC 256G DIE 32GX8

TLC 256G DIE 32GX8

Supplier's Site
TLC 256G DIE 32GX8

TLC 256G DIE 32GX8

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08EBHAFB16A3WSA MT29F256G08EBHAFB16A3WSA MT29F256G08EBHAFB16A3WSA
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000000 kbits 256000000 kbits 256000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 4720BDM - Lingto Electronic Limited
Rochester Electronics
View Details
2 suppliers
Memory - S25FL064P0XNFI001M - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
2 suppliers
Memory - AS5SP128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details