Micron Technology, Inc. Memory MT29F256G08EBHAFB16A3WC1ES

Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die
  • Memory - MT29F256G08EBHAFB16A3WC1ES - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F256G08EBHAFB16A3WC1ES - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F256G08EBHAFB16A3WC1ES - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F256G08EBHAFB16A3WC1ES
Memory MT29F256G08EBHAFB16A3WC1ES
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die

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Memory - MT29F256G08EBHAFB16A3WC1ES - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F256G08EBHAFB16A3WC1ES
Memory MT29F256G08EBHAFB16A3WC1ES
IC FLASH TLC 256GBIT 32GX8

IC FLASH TLC 256GBIT 32GX8

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F256G08EBHAFB16A3WC1ES MT29F256G08EBHAFB16A3WC1ES
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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