Micron Technology, Inc. Memory MT29F256G08CECCBH6-6ITR:C TR

Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 167 MHz 152-VBGA (14x18)
Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 167 MHz 152-VBGA (14x18)

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FLASH - NAND (MLC) Memory IC 256Gbit Parallel 167 MHz 152-VBGA (14x18)

FLASH - NAND (MLC) Memory IC 256Gbit Parallel 167 MHz 152-VBGA (14x18)

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IC FLASH 256GBIT PAR 152VBGA

IC FLASH 256GBIT PAR 152VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08CECCBH6-6ITR:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08CECCBH6-6ITR:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08CECCBH6-6ITR:C TR
IC FLASH 256GBIT PAR 152VBGA

IC FLASH 256GBIT PAR 152VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08CECCBH6-6ITR:C TR MT29F256G08CECCBH6-6ITR:C TR MT29F256G08CECCBH6-6ITR:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000000 kbits 256000000 kbits 256000000 kbits
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