Micron Technology, Inc. Memory MT29F256G08CBCBBWP-10ES:B TR

Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I
Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

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Description
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FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

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IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08CBCBBWP-10ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08CBCBBWP-10ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08CBCBBWP-10ES:B TR
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08CBCBBWP-10ES:B TR MT29F256G08CBCBBWP-10ES:B TR MT29F256G08CBCBBWP-10ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
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