Micron Technology, Inc. Memory MT29F256G08CBCBBWP-10ES:B TR

Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I
Description
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08CBCBBWP-10ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08CBCBBWP-10ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08CBCBBWP-10ES:B TR
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08CBCBBWP-10ES:B TR MT29F256G08CBCBBWP-10ES:B TR MT29F256G08CBCBBWP-10ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9232406MYA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 27C256-20/P229 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Controllers - DP8422AVX-20 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details