Micron Technology, Inc. Memory MT29F256G08CBCBBWP-10:B TR

Description
IC FLASH 256GBIT PAR 48TSOP I
Description
IC FLASH 256GBIT PAR 48TSOP I

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND (MLC) Memory IC 256Gbit Parallel 100 MHz 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F256G08CBCBBWP-10:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F256G08CBCBBWP-10:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F256G08CBCBBWP-10:B TR
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F256G08CBCBBWP-10:B TR MT29F256G08CBCBBWP-10:B TR MT29F256G08CBCBBWP-10:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details
Integrated Circuits (ICs) - Memory - Controllers - DP8431VX-33 - Acme Chip Technology Co., Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - IS29GL256S-10DHV01-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - 71016S12PHI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details