Micron Technology, Inc. Memory MT29F256G08CBCBBJ4-37:B TR

Description
IC FLASH 256GBIT PAR 132VBGA
  • Memory - MT29F256G08CBCBBJ4-37:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F256G08CBCBBJ4-37:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 256GBIT PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F256G08CBCBBJ4-37:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F256G08CBCBBJ4-37:B TR
Memory MT29F256G08CBCBBJ4-37:B TR
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
Memory - MT29F256G08CBCBBJ4-37:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F256G08CBCBBJ4-37:B TR
Memory MT29F256G08CBCBBJ4-37:B TR
FLASH - NAND (MLC) Memory IC 256Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND (MLC) Memory IC 256Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F256G08CBCBBJ4-37:B TR MT29F256G08CBCBBJ4-37:B TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420776
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 54F189DLQB - Lingto Electronic Limited
Rochester Electronics
Memory
54F189DLQB
View Details
Integrated Circuits (ICs) - Logic - FIFOs Memory - 4703BDM - Acme Chip Technology Co., Limited
Texas Instruments
Integrated Circuits (ICs) - Logic - FIFOs Memory
4703BDM
View Details
2 suppliers
Memory - SMJ626162 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ626162
Specs
Memory Category SDRAM; DRAM Chip
Access Time 12 ns
Operating Temperature -65 to 150 C (-85 to 302 F)
View Details