Micron Technology, Inc. Memory MT29F256G08AUEDBJ6-12:D

Description
IC FLASH 256GBIT PAR 132LBGA
  • Memory - MT29F256G08AUEDBJ6-12:D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F256G08AUEDBJ6-12:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 256GBIT PAR 132LBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F256G08AUEDBJ6-12:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F256G08AUEDBJ6-12:D
Memory MT29F256G08AUEDBJ6-12:D
IC FLASH 256GBIT PAR 132LBGA

IC FLASH 256GBIT PAR 132LBGA

Supplier's Site Datasheet
Memory - MT29F256G08AUEDBJ6-12:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F256G08AUEDBJ6-12:D
Memory MT29F256G08AUEDBJ6-12:D
FLASH - NAND (SLC) Memory IC 256Gbit Parallel 83 MHz 132-LBGA (12x18)

FLASH - NAND (SLC) Memory IC 256Gbit Parallel 83 MHz 132-LBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F256G08AUEDBJ6-12:D MT29F256G08AUEDBJ6-12:D
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR3L128M16JTBG
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details
Flash Memory - 1882521 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882521
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Newest Parts - LM8342SD/NOPB - 1200845-LM8342SD/NOPB - Win Source Electronics
Texas Instruments
Newest Parts - LM8342SD/NOPB
LM8342SD/NOPB
View Details
Memory - 043641RLAD-7 - Lingto Electronic Limited
Rochester Electronics
Memory
043641RLAD-7
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.5 ns
Density 4500 kbits
View Details