Micron Technology, Inc. Memory MT29F1T208ECHBBJ4-3RES:B TR

Description
IC FLASH 1.125T PARALLEL 132VBGA
Description
IC FLASH 1.125T PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1.125T PARALLEL 132VBGA

IC FLASH 1.125T PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1.125Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1.125Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1T208ECHBBJ4-3RES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T208ECHBBJ4-3RES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1T208ECHBBJ4-3RES:B TR
IC FLASH 1.125T PARALLEL 132VBGA

IC FLASH 1.125T PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T208ECHBBJ4-3RES:B TR MT29F1T208ECHBBJ4-3RES:B TR MT29F1T208ECHBBJ4-3RES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL01GS-11TFV01 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 1000000 kbits
View Details
2 suppliers
Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details