Micron Technology, Inc. Memory MT29F1T208ECCBBJ4-37ES:B TR

Description
FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now
IC FLASH 1.125T PAR 132VBGA

IC FLASH 1.125T PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1T208ECCBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T208ECCBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1T208ECCBBJ4-37ES:B TR
IC FLASH 1.125T PAR 132VBGA

IC FLASH 1.125T PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T208ECCBBJ4-37ES:B TR MT29F1T208ECCBBJ4-37ES:B TR MT29F1T208ECCBBJ4-37ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory, 8Mbit, 55Ns, 48-Tsop; Flash Memory Type Cypress Infineon Technologies - 42K8364 - Newark, An Avnet Company
Specs
Memory Category Flash
Access Time 55 ns
Density 8000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - MM54C200D/883 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile
Density 0 kbits
Package Type 16-CDIP
View Details
2 suppliers
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details