Micron Technology, Inc. Memory MT29F1T208ECCBBJ4-37ES:B TR

Description
IC FLASH 1.125T PAR 132VBGA
Description
IC FLASH 1.125T PAR 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1.125T PAR 132VBGA

IC FLASH 1.125T PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1T208ECCBBJ4-37ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T208ECCBBJ4-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1T208ECCBBJ4-37ES:B TR
IC FLASH 1.125T PAR 132VBGA

IC FLASH 1.125T PAR 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1.125Tbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T208ECCBBJ4-37ES:B TR MT29F1T208ECCBBJ4-37ES:B TR MT29F1T208ECCBBJ4-37ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - DM77S184J-MIL - Acme Chip Technology Co., Limited
Specs
Memory Category PROM; Non-Volatile
Cycle Time 70 ns
Density 8 kbits
View Details
2 suppliers
Memory - 24C04AE/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details