Micron Technology, Inc. IT infrastructure Memory MT29F1T08EELEEJ4-R:E

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote
Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

Buy Now
Memory - MT29F1T08EELEEJ4-R:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (TLC) Memory IC 1Tbit Parallel 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 1Tbit Parallel 132-VBGA (12x18)

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08EELEEJ4-R:E
Integrated Circuits (ICs) - Memory - Memory MT29F1T08EELEEJ4-R:E
TLC 1T 128GX8 VBGA DDP

TLC 1T 128GX8 VBGA DDP

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08EELEEJ4-R:E MT29F1T08EELEEJ4-R:E
Product Name IT infrastructure Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL064P0XMFI000S - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
2 suppliers
Memory - 27C512-15/PQTP - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Density 512 kbits
View Details
Flash Memory - 1882769P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - MYXxxSMS01GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details