Micron Technology, Inc. Memory MT29F1T08EEHAFJ4-3ITFES:A

Description
IC FLASH 1TB PARALLEL 132VBGA
Datasheet
Description
IC FLASH 1TB PARALLEL 132VBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory MT29F1T08EEHAFJ4-3ITFES:A
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08EEHAFJ4-3ITFES:A MT29F1T08EEHAFJ4-3ITFES:A MT29F1T08EEHAFJ4-3ITFES:A
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 1000000000 kbits 1000000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA - 5962F1120101VXA - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details
Memory - 6116SA45DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details