Micron Technology, Inc. Memory MT29F1T08EEHAFJ4-3ITFES:A TR

Description
IC FLASH 1TB PARALLEL 132VBGA
Description
IC FLASH 1TB PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory MT29F1T08EEHAFJ4-3ITFES:A TR
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08EEHAFJ4-3ITFES:A TR MT29F1T08EEHAFJ4-3ITFES:A TR MT29F1T08EEHAFJ4-3ITFES:A TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 1000000000 kbits 1000000000 kbits
Data Rate 333 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
FIFOs Memory - SN74ACT7200L20NP - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2 kbits
Package Type DIP; 28-DIP (0.300\", 7.62mm)
View Details