Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)
TLC 1T 128GX8 VBGA DDP
TLC1T128GX8VBGADDP, TRAY ROHS COMPLIANT: YES
TLC 1T 128GX8 VBGA DDP
| Win Source Electronics | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Lingto Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT29F1T08EEHAFJ4-3ITF:A | MT29F1T08EEHAFJ4-3ITF:A | MT29F1T08EEHAFJ4-3ITF:A | 80AH7677 | MT29F1T08EEHAFJ4-3ITF:A | |
| Product Name | IT infrastructure Memory | Memory | Memory | Memory | Tlc1T128Gx8Vbgaddp, Tray Rohs Compliant Micron | Integrated Circuits (ICs) - Memory |
| Memory Category | Flash | Flash; FLASH | FLASH - NAND | Flash; Flash | Flash; Non-Volatile | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 1000000000 kbits | 1000000000 kbits | 1000000000 kbits |
