Micron Technology, Inc. IT infrastructure Memory MT29F1T08CMCBBJ4-37:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
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Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

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FLASH - NAND Memory IC 1Tbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 267 MHz 132-VBGA (12x18)

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IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1T08CMCBBJ4-37:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08CMCBBJ4-37:B
Integrated Circuits (ICs) - Memory - Memory MT29F1T08CMCBBJ4-37:B
IC FLASH 1TBIT PAR 132VBGA

IC FLASH 1TBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08CMCBBJ4-37:B MT29F1T08CMCBBJ4-37:B MT29F1T08CMCBBJ4-37:B
Product Name IT infrastructure Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
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