Micron Technology, Inc. Memory MT29F1T08CMCBBJ4-37:B TR

Description
IC FLASH 1TB PARALLEL 132VBGA
Description
IC FLASH 1TB PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1T08CMCBBJ4-37:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08CMCBBJ4-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1T08CMCBBJ4-37:B TR
IC FLASH 1TBIT PAR 132VBGA

IC FLASH 1TBIT PAR 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08CMCBBJ4-37:B TR MT29F1T08CMCBBJ4-37:B TR MT29F1T08CMCBBJ4-37:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Quad Memory IC and Storage Component - 774-S25FL032P0XNFI010 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Cycle Time 5000 to 3.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 5962-8869002LA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 120 ns
Density 4 kbits
View Details
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Controllers - BQ2205LYPWG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP; TSSOP; 16-TSSOP (0.173\", 4.40mm Width)
Supply Voltage 3.6V; 3V ~ 3.6V
View Details