Micron Technology, Inc. Memory MT29F1G16ABBEAM68M3WC2

Description
IC FLASH 1GBIT PARALLEL
  • Memory - MT29F1G16ABBEAM68M3WC2 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F1G16ABBEAM68M3WC2 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 1GBIT PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F1G16ABBEAM68M3WC2 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F1G16ABBEAM68M3WC2
Memory MT29F1G16ABBEAM68M3WC2
IC FLASH 1GBIT PARALLEL

IC FLASH 1GBIT PARALLEL

Supplier's Site Datasheet
Memory - MT29F1G16ABBEAM68M3WC2 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F1G16ABBEAM68M3WC2
Memory MT29F1G16ABBEAM68M3WC2
FLASH - NAND Memory IC 1Gbit Parallel

FLASH - NAND Memory IC 1Gbit Parallel

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F1G16ABBEAM68M3WC2 MT29F1G16ABBEAM68M3WC2
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS0xGPS08PB-4108/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMS0xGPS08PB-4108/x
Specs
Memory Category MRAM; STT-MRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000000 kbits
View Details
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
IS26KL256S-DABLA100
Specs
Memory Category Flash; FLASH
Cycle Time 96 ns
Density 32000 kbits
View Details
Memory - S25FL128SAGMFN000 - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL128SAGMFN000
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details
- 93425DMQB30 - Rochester Electronics
Texas Instruments
Memory IC and Storage Component
93425DMQB30
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers